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12/03/2013

Kintech Lab presented report on mechanisms of conductivity formation in doped CdTe semiconductor on the conference “MRS Fall Meeting 2013”, Boston, MA, USA.

Report “Search for the Major Chlorine-Related Defects in CdTe:Cl” by D. Krasikov, A. Knizhnik, B. Potapkin (Kintech Lab Ltd., Moscow, Russia) and T. Sommerer (GE Global Research, Niskayuna, NY, USA) was presented on the conference “MRS Fall Meeting 2013” held annually in Boston, MA, USA. The report is devoted to the theoretical analysis of the mechanism of formation of conductivity in Cl-doped CdTe semiconductor. The reasons of impossibility of formation of semi-insulating state of CdTe containing the defects and impurities with small ionization energies only are described (see [1]). Deep Cl-related defects that can be responsible for the high resistivity are proposed. For the first time presented a model capable with one set of parameters to describe a high-temperature conductivity of CdTe and CdTe:Cl and also conductivity of CdTe:Cl at room temperature depending on the Cl concentration, including the formation of semi-insulating state at the chlorine concentration > 10^17 cm-3.

Experimental [2,3] and simulated resistivity of CdTe:Cl at different Cl concentrations.

1. D. Krasikov, A. Knizhnik, B. Potapkin, T. Sommerer, Semicond. Sci. Technol. 28, 125019 (2013).

2. V.D. Popovych, I.S. Virt, F.F. Sizov et al., J. Crystal Growth 308, 63 (2007).

3. H-Y Shin, C-Y Sun, J. Crystal Growth 186, 67-78 (1998).