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Kintech Lab has started a project on modeling of TAS MRAM memory

Kintech lab in cooperation with the company "Crocus Nanoelectronics" and Ministry of education and science of the Russian Federation has started a project on multilevel modeling of thermal-assisted swithing magnetoresistive random-access memory (TAS MRAM) based on the magnetic tunneling junction. This memory provides high speed writing and reading (comparable to DRAM), allows one to store information for a long time (similar to Flash), and, in addition, has a high reliability, can operate in a large temperature range, and has a radiation resistance. The method of device scaling on technology 65 nm and smaller will be determined during the project. Work is performed under the agreement with the Ministry of Education and Science of Russia №14.576.21.0023 by 30.06.2014.