The process of the electron impact dissociation of molecules is one of the main mechanisms of initial chemical transformation in chemically active plasma. Specifically, the dissociation of an SF molecule determines the kinetics of plasma etching in semiconductor production. The cross section of this process is calculated within the framework of the similarity function method using the results of quantum chemical calculations of the potential energy curves for both the ground and excited states of the molecule, as well as the dependence of the transition dipole moment on the internuclear distance.  The dissociation process proceeds through the formation of a repulsing state on the molecule.